G3S12020B
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 3-P
$23.61
Available to order
Reference Price (USD)
1+
$23.61000
500+
$23.3739
1000+
$23.1378
1500+
$22.9017
2000+
$22.6656
2500+
$22.4295
Exquisite packaging
Discount
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The G3S12020B rectifier array from Global Power Technology-GPT redefines efficiency in the Diodes - Rectifiers - Arrays classification. Its optimized chip geometry enables higher surge withstand capability, critical for automotive alternators and arc suppression circuits. This product shines in three-phase rectification and snubber networks, offering aerospace-grade reliability. Global Power Technology-GPT's precision manufacturing ensures each G3S12020B meets stringent quality standards for mission-critical applications.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 37A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC
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