G3S12030B
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 30A 3-P
$40.97
Available to order
Reference Price (USD)
1+
$40.97000
500+
$40.5603
1000+
$40.1506
1500+
$39.7409
2000+
$39.3312
2500+
$38.9215
Exquisite packaging
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For engineers specializing in power electronics, the G3S12030B by Global Power Technology-GPT represents the pinnacle of rectifier diode array technology. Part of the essential Discrete Semiconductor Products lineup, this device features parallel diode configurations for increased current handling. Its applications span photovoltaic systems, UPS backups, and industrial automation controls. With Global Power Technology-GPT's patented junction design, the G3S12030B achieves superior heat dissipation and long-term stability under continuous load.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 42A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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