G4S06510QT
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A DFN8
$6.62
Available to order
Reference Price (USD)
1+
$6.62000
500+
$6.5538
1000+
$6.4876
1500+
$6.4214
2000+
$6.3552
2500+
$6.289
Exquisite packaging
Discount
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The G4S06510QT single rectifier diode by Global Power Technology-GPT is a standout in the Diodes - Rectifiers - Single classification. Known for its robust construction and high rectification efficiency, it is perfect for demanding applications like electric vehicle charging stations and industrial robotics. Its low power dissipation and high thermal stability ensure optimal performance in data storage systems and server farms. The G4S06510QT is also used in consumer gadgets, such as smartphones and tablets, highlighting its adaptability. Global Power Technology-GPT's G4S06510QT is the ultimate solution for high-performance rectification needs.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 44.9A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 550pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 4-PowerTSFN
- Supplier Device Package: 4-DFN (8x8)
- Operating Temperature - Junction: -55°C ~ 175°C
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