G4S06515QT
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 15A DFN8
$9.22
Available to order
Reference Price (USD)
1+
$9.22000
500+
$9.1278
1000+
$9.0356
1500+
$8.9434
2000+
$8.8512
2500+
$8.759
Exquisite packaging
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Discover the G4S06515QT single rectifier diode by Global Power Technology-GPT, a key component in the Diodes - Rectifiers - Single classification. This diode excels in providing stable and efficient rectification for circuits requiring precise voltage control. With its high surge current capability and low leakage, it is perfect for use in power management systems, LED drivers, and battery chargers. The G4S06515QT is widely utilized in telecommunications, renewable energy systems, and medical devices, ensuring reliable operation under varying load conditions. Choose Global Power Technology-GPT's G4S06515QT for unmatched quality and performance in discrete semiconductor solutions.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 53A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 645pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 4-PowerTSFN
- Supplier Device Package: 4-DFN (8x8)
- Operating Temperature - Junction: -55°C ~ 175°C
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