G4S06516BT
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 16A 3-PI
$8.19
Available to order
Reference Price (USD)
1+
$8.19000
500+
$8.1081
1000+
$8.0262
1500+
$7.9443
2000+
$7.8624
2500+
$7.7805
Exquisite packaging
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For engineers specializing in power electronics, the G4S06516BT by Global Power Technology-GPT represents the pinnacle of rectifier diode array technology. Part of the essential Discrete Semiconductor Products lineup, this device features parallel diode configurations for increased current handling. Its applications span photovoltaic systems, UPS backups, and industrial automation controls. With Global Power Technology-GPT's patented junction design, the G4S06516BT achieves superior heat dissipation and long-term stability under continuous load.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 25.9A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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