G4S12010PM
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
$18.83
Available to order
Reference Price (USD)
1+
$18.83000
500+
$18.6417
1000+
$18.4534
1500+
$18.2651
2000+
$18.0768
2500+
$17.8885
Exquisite packaging
Discount
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Maximize your device's efficiency with the G4S12010PM single rectifier diode from Global Power Technology-GPT. This Discrete Semiconductor Product is crafted for precision, offering fast recovery times and high current handling. It is ideal for use in power supplies, motor controls, and lighting systems, where energy efficiency is crucial. The G4S12010PM is also employed in agricultural machinery and marine electronics, proving its versatility across industries. Global Power Technology-GPT's G4S12010PM is synonymous with reliability, making it a trusted choice for engineers worldwide.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 33.2A (DC)
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 30 µA @ 1700 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC
- Operating Temperature - Junction: -55°C ~ 175°C
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