G4S12020D
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P
$20.47
Available to order
Reference Price (USD)
1+
$20.47000
500+
$20.2653
1000+
$20.0606
1500+
$19.8559
2000+
$19.6512
2500+
$19.4465
Exquisite packaging
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Enhance your circuit performance with the G4S12020D single rectifier diode from Global Power Technology-GPT. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the G4S12020D delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. Global Power Technology-GPT's G4S12020D is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 75A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 2600pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263
- Operating Temperature - Junction: -55°C ~ 175°C
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