G5S06506HT
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
$5.16
Available to order
Reference Price (USD)
1+
$5.16000
500+
$5.1084
1000+
$5.0568
1500+
$5.0052
2000+
$4.9536
2500+
$4.902
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with the G5S06506HT single rectifier diode from Global Power Technology-GPT. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the G5S06506HT delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. Global Power Technology-GPT's G5S06506HT is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 18.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 395pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
onsemi
NSVRB521S30T5G
Panjit International Inc.
ER2G_R1_00001
Vishay General Semiconductor - Diodes Division
VS-30BQ015-M3/9AT
Vishay General Semiconductor - Diodes Division
BY228GP-E3/54
Taiwan Semiconductor Corporation
SS13L
Toshiba Semiconductor and Storage
1SS394TE85LF
Microchip Technology
1N5417E3/TR
Vishay General Semiconductor - Diodes Division
BAS286-GS18
onsemi
NRVBA160NT3G
Diotec Semiconductor