G5S06508QT
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A DFN8*
$6.62
Available to order
Reference Price (USD)
1+
$6.62000
500+
$6.5538
1000+
$6.4876
1500+
$6.4214
2000+
$6.3552
2500+
$6.289
Exquisite packaging
Discount
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The G5S06508QT by Global Power Technology-GPT is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The G5S06508QT is also used in smart home devices and wearable technology, ensuring seamless operation. Global Power Technology-GPT's expertise in semiconductor technology guarantees that the G5S06508QT delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 44.9A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 550pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 4-PowerTSFN
- Supplier Device Package: 4-DFN (8x8)
- Operating Temperature - Junction: -55°C ~ 175°C
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