G5S06510CT
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
$6.12
Available to order
Reference Price (USD)
1+
$6.12000
500+
$6.0588
1000+
$5.9976
1500+
$5.9364
2000+
$5.8752
2500+
$5.814
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the G5S06510CT single rectifier diode by Global Power Technology-GPT, a key component in the Diodes - Rectifiers - Single classification. This diode excels in providing stable and efficient rectification for circuits requiring precise voltage control. With its high surge current capability and low leakage, it is perfect for use in power management systems, LED drivers, and battery chargers. The G5S06510CT is widely utilized in telecommunications, renewable energy systems, and medical devices, ensuring reliable operation under varying load conditions. Choose Global Power Technology-GPT's G5S06510CT for unmatched quality and performance in discrete semiconductor solutions.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 35.8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 645pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Toshiba Semiconductor and Storage
1SS405,H3F
Vishay General Semiconductor - Diodes Division
V3F6HM3/I
Vishay General Semiconductor - Diodes Division
BAT42WS-HE3-08
Taiwan Semiconductor Corporation
SF46G
IXYS
DSEP8-06A
Diotec Semiconductor
P1000K
Diotec Semiconductor
2CL75
Microchip Technology
JANS1N5614US
Solid State Inc.
1N2275R
Panjit International Inc.