G5S06510DT
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
$6.12
Available to order
Reference Price (USD)
1+
$6.12000
500+
$6.0588
1000+
$5.9976
1500+
$5.9364
2000+
$5.8752
2500+
$5.814
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The G5S06510DT single rectifier diode by Global Power Technology-GPT is a standout in the Diodes - Rectifiers - Single classification. Known for its robust construction and high rectification efficiency, it is perfect for demanding applications like electric vehicle charging stations and industrial robotics. Its low power dissipation and high thermal stability ensure optimal performance in data storage systems and server farms. The G5S06510DT is also used in consumer gadgets, such as smartphones and tablets, highlighting its adaptability. Global Power Technology-GPT's G5S06510DT is the ultimate solution for high-performance rectification needs.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 38A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 645pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Microchip Technology
JANS1N5618/TR
Panjit International Inc.
SBA120CS_R1_00001
Vishay General Semiconductor - Diodes Division
VT760-E3/4W
onsemi
SB10-03A2
Microchip Technology
JAN1N6622US
Vishay General Semiconductor - Diodes Division
B340A-M3/5AT
Rohm Semiconductor
RB161MM-20TR
Diodes Incorporated
1N4148WQ-7-F
GeneSiC Semiconductor
MBRH12080R
NTE Electronics, Inc