G5S12008C
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 8A 2-PI
$8.61
Available to order
Reference Price (USD)
1+
$8.61000
500+
$8.5239
1000+
$8.4378
1500+
$8.3517
2000+
$8.2656
2500+
$8.1795
Exquisite packaging
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Discover the G5S12008C single rectifier diode by Global Power Technology-GPT, a key component in the Diodes - Rectifiers - Single classification. This diode excels in providing stable and efficient rectification for circuits requiring precise voltage control. With its high surge current capability and low leakage, it is perfect for use in power management systems, LED drivers, and battery chargers. The G5S12008C is widely utilized in telecommunications, renewable energy systems, and medical devices, ensuring reliable operation under varying load conditions. Choose Global Power Technology-GPT's G5S12008C for unmatched quality and performance in discrete semiconductor solutions.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 28.9A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 550pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Operating Temperature - Junction: -55°C ~ 175°C
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