G5S12008H
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 8A 2-PI
$8.61
Available to order
Reference Price (USD)
1+
$8.61000
500+
$8.5239
1000+
$8.4378
1500+
$8.3517
2000+
$8.2656
2500+
$8.1795
Exquisite packaging
Discount
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The G5S12008H by Global Power Technology-GPT is a top-tier single rectifier diode designed for high-efficiency power conversion. Belonging to the Diodes - Rectifiers - Single category, it features ultra-fast recovery times and minimal power dissipation, making it perfect for switch-mode power supplies and DC-DC converters. Its versatile applications span industrial motor drives, solar inverters, and consumer electronics, where consistent performance is essential. Engineered for durability, the G5S12008H ensures long-term reliability even in harsh operating conditions. Trust Global Power Technology-GPT for cutting-edge semiconductor solutions that drive innovation.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 16A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 550pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F
- Operating Temperature - Junction: -55°C ~ 175°C
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