G5S12010BM
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 3-P
$14.88
Available to order
Reference Price (USD)
1+
$14.88000
500+
$14.7312
1000+
$14.5824
1500+
$14.4336
2000+
$14.2848
2500+
$14.136
Exquisite packaging
Discount
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Discover the high-performance G5S12010BM from Global Power Technology-GPT, a premium diode rectifier array designed for efficient power conversion in demanding applications. As part of the Discrete Semiconductor Products category, this diode array ensures reliable rectification with low forward voltage drop and high surge current capability. Ideal for power supplies, motor controls, and inverters, the G5S12010BM delivers exceptional durability and thermal performance. Whether you're designing industrial equipment or automotive electronics, trust Global Power Technology-GPT's cutting-edge technology for superior efficiency and longevity.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 19.35A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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