G5S12010PM
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
$14.88
Available to order
Reference Price (USD)
1+
$14.88000
500+
$14.7312
1000+
$14.5824
1500+
$14.4336
2000+
$14.2848
2500+
$14.136
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The G5S12010PM by Global Power Technology-GPT is a top-tier single rectifier diode designed for high-efficiency power conversion. Belonging to the Diodes - Rectifiers - Single category, it features ultra-fast recovery times and minimal power dissipation, making it perfect for switch-mode power supplies and DC-DC converters. Its versatile applications span industrial motor drives, solar inverters, and consumer electronics, where consistent performance is essential. Engineered for durability, the G5S12010PM ensures long-term reliability even in harsh operating conditions. Trust Global Power Technology-GPT for cutting-edge semiconductor solutions that drive innovation.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 33A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 825pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Diodes Incorporated
SBRT10U60D1-13
onsemi
MBRS2H100T3G
Vishay General Semiconductor - Diodes Division
V8PM15-M3/H
Micro Commercial Co
ER1G-LTP
STMicroelectronics
STTH15S12D
Nexperia USA Inc.
PMEG2010AEH,115
Vishay General Semiconductor - Diodes Division
VS-10BQ060HM3/5BT
Vishay General Semiconductor - Diodes Division
RGF1A-E3/67A
Central Semiconductor Corp
CMR3U-04M TR13 PBFREE
MDD