G5S12015A
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 15A 2-P
$16.33
Available to order
Reference Price (USD)
1+
$16.33000
500+
$16.1667
1000+
$16.0034
1500+
$15.8401
2000+
$15.6768
2500+
$15.5135
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The G5S12015A from Global Power Technology-GPT is a premium single rectifier diode that stands out in the Diodes - Rectifiers - Single segment. With excellent thermal characteristics and high reverse voltage capability, it is perfect for high-frequency applications like RF modules and wireless charging systems. This diode is also widely used in automotive lighting and HVAC controls, ensuring efficient energy conversion. Global Power Technology-GPT's dedication to quality means the G5S12015A meets rigorous standards, providing dependable performance for both commercial and industrial applications.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 53A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 1370pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Comchip Technology
ACDBCT320-HF
onsemi
MURD320T4G
Micro Commercial Co
FR603GP-TP
Vishay General Semiconductor - Diodes Division
VS-30EPF06-M3
Micro Commercial Co
US2GA-TP
Vishay General Semiconductor - Diodes Division
VS-60EPU06-N3
Vishay General Semiconductor - Diodes Division
SS2P3HM3/84A
NTE Electronics, Inc
NTE5935
onsemi
MBR360G
Diotec Semiconductor