G5S12020BM
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 3-P
$23.23
Available to order
Reference Price (USD)
1+
$23.23000
500+
$22.9977
1000+
$22.7654
1500+
$22.5331
2000+
$22.3008
2500+
$22.0685
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your circuitry with the G5S12020BM by Global Power Technology-GPT, a top-tier rectifier diode array from the Diodes - Rectifiers - Arrays subcategory. Engineered for precision and reliability, this component features fast switching and high current capacity, making it perfect for AC/DC conversion and voltage regulation. Common applications include welding machines, battery chargers, and renewable energy systems. With Global Power Technology-GPT's commitment to quality, the G5S12020BM stands out as a robust solution for engineers seeking optimal performance in harsh environments.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 33A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
Related Products
Harris Corporation
BYW51-200
Vishay General Semiconductor - Diodes Division
VT1060C-M3/4W
Vishay General Semiconductor - Diodes Division
GSD2004A-G3-08
IXYS
DSP8-08A
Rohm Semiconductor
BAW56HYT116
SemiQ
GP3D024A065U
Vishay General Semiconductor - Diodes Division
VS-MBRB4045CTL-M3
Vishay General Semiconductor - Diodes Division
VS-MBRB2045CTR-M3
Panjit International Inc.
MBR10100DC_R2_00001
Vishay General Semiconductor - Diodes Division