G5S12020H
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P
$27.77
Available to order
Reference Price (USD)
1+
$27.77000
500+
$27.4923
1000+
$27.2146
1500+
$26.9369
2000+
$26.6592
2500+
$26.3815
Exquisite packaging
Discount
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The G5S12020H by Global Power Technology-GPT is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The G5S12020H is also used in smart home devices and wearable technology, ensuring seamless operation. Global Power Technology-GPT's expertise in semiconductor technology guarantees that the G5S12020H delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 24.6A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 1320pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F
- Operating Temperature - Junction: -55°C ~ 175°C
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