G5S12040BM
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 40A 3-P
$46.35
Available to order
Reference Price (USD)
1+
$46.35000
500+
$45.8865
1000+
$45.423
1500+
$44.9595
2000+
$44.496
2500+
$44.0325
Exquisite packaging
Discount
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Meet the G5S12040BM - Global Power Technology-GPT's advanced solution in the Diodes - Rectifiers - Arrays segment. This high-speed rectifier array boasts ultra-low recovery time, significantly reducing power loss in switching applications. From server power supplies to LED lighting drivers and electric vehicle charging stations, this component ensures energy-efficient operation. Global Power Technology-GPT combines innovative silicon technology with rigorous testing to deliver diode arrays that outperform in reliability and thermal management.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 62A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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