G5S6506Z
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A DFN5*
$5.92
Available to order
Reference Price (USD)
1+
$5.92000
500+
$5.8608
1000+
$5.8016
1500+
$5.7424
2000+
$5.6832
2500+
$5.624
Exquisite packaging
Discount
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Enhance your circuit performance with the G5S6506Z single rectifier diode from Global Power Technology-GPT. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the G5S6506Z delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. Global Power Technology-GPT's G5S6506Z is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 30.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 395pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (4.9x5.75)
- Operating Temperature - Junction: -55°C ~ 175°C
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