G6N02L
Goford Semiconductor
Goford Semiconductor
MOSFET N-CH 20V 6A SOT-23-3L
$0.45
Available to order
Reference Price (USD)
1+
$0.45000
500+
$0.4455
1000+
$0.441
1500+
$0.4365
2000+
$0.432
2500+
$0.4275
Exquisite packaging
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The G6N02L by Goford Semiconductor is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the G6N02L is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 11.3mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 0.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 10 V
- FET Feature: Standard
- Power Dissipation (Max): 1.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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