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GAP05SLT80-220

GeneSiC Semiconductor
GAP05SLT80-220 Preview
GeneSiC Semiconductor
DIODE SCHOTTKY 8KV 50MA AXIAL
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Specifications

  • Product Status: Obsolete
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 8000 V
  • Current - Average Rectified (Io): 50mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 4.6 V @ 50 mA
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 3.8 µA @ 8000 V
  • Capacitance @ Vr, F: 25pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -55°C ~ 175°C

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