GB01SLT12-252
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE SILICON 1.2KV 1A TO252
$1.49
Available to order
Reference Price (USD)
2,500+
$1.22691
5,000+
$1.18147
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The GB01SLT12-252 from GeneSiC Semiconductor is a premium single rectifier diode that stands out in the Diodes - Rectifiers - Single segment. With excellent thermal characteristics and high reverse voltage capability, it is perfect for high-frequency applications like RF modules and wireless charging systems. This diode is also widely used in automotive lighting and HVAC controls, ensuring efficient energy conversion. GeneSiC Semiconductor's dedication to quality means the GB01SLT12-252 meets rigorous standards, providing dependable performance for both commercial and industrial applications.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
- Capacitance @ Vr, F: 69pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Yangzhou Yangjie Electronic Technology Co.,Ltd
E1D-F1-0000HF
Diotec Semiconductor
SB120S
Littelfuse Inc.
D6025LCTP
Diotec Semiconductor
P2000MTL
UnitedSiC
UJ3D06506TS
Diotec Semiconductor
SDB13HS
Taiwan Semiconductor Corporation
SRT16
Panjit International Inc.
SK15_R1_00001
Microchip Technology
1N649UR-1
Taiwan Semiconductor Corporation