Shopping cart

Subtotal: $0.00

GB02SHT03-46

GeneSiC Semiconductor
GB02SHT03-46 Preview
GeneSiC Semiconductor
DIODE SCHOTTKY 300V 4A
$51.78
Available to order
Reference Price (USD)
1+
$49.63000
10+
$46.40900
100+
$40.23900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 300 V
  • Capacitance @ Vr, F: 76pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-206AB, TO-46-3 Metal Can
  • Supplier Device Package: TO-46
  • Operating Temperature - Junction: -55°C ~ 225°C

Related Products

Vishay General Semiconductor - Diodes Division

S3B-M3/9AT

Taiwan Semiconductor Corporation

UF1GH

Microchip Technology

1N5183E3

Vishay General Semiconductor - Diodes Division

AU1PDHM3/84A

Vishay General Semiconductor - Diodes Division

VS-20ETF10S-M3

SMC Diode Solutions

SD090SB45B.T

Micro Commercial Co

BAS20WT-TP

Vishay General Semiconductor - Diodes Division

RS2JHE3_A/H

Top