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GB10SLT12-252

GeneSiC Semiconductor
GB10SLT12-252 Preview
GeneSiC Semiconductor
DIODE SCHOTTKY 1.2KV 10A TO252
$0.00
Available to order
Reference Price (USD)
2,500+
$5.46975
Exquisite packaging
Discount
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Specifications

  • Product Status: Obsolete
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
  • Capacitance @ Vr, F: 520pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: -55°C ~ 175°C

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