GB2X100MPS12-227
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC DIODE 1200V 200A SOT-227
$144.69
Available to order
Reference Price (USD)
1+
$141.35000
10+
$132.11100
30+
$127.49200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The GB2X100MPS12-227 from GeneSiC Semiconductor sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. GeneSiC Semiconductor's rigorous quality control ensures the GB2X100MPS12-227 maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 2 Independent
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 185A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
Related Products
Vishay General Semiconductor - Diodes Division
BAS40-06-G3-18
Infineon Technologies
BAS7006B5003
SanRex Corporation
DD160KB80
SMC Diode Solutions
225CNQ015
NTE Electronics, Inc
NTE6251
Vishay General Semiconductor - Diodes Division
VT2060G-E3/4W
IXYS
DPG60C300HB
onsemi
FFA60UP30DNTU
SMC Diode Solutions
69CNQ150
Nexperia USA Inc.