GB2X50MPS12-227
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC DIODE 1200V 100A SOT-227
$87.84
Available to order
Reference Price (USD)
1+
$87.12000
10+
$81.67600
30+
$77.86433
100+
$73.50840
Exquisite packaging
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The GB2X50MPS12-227 from GeneSiC Semiconductor is a standout in the Discrete Semiconductor Products family, offering unmatched rectification efficiency in compact diode arrays. Designed for high-density PCB layouts, this product excels in bridge rectifiers and polarity protection circuits. Its low leakage current and high-temperature stability make it a favorite for telecommunications, consumer electronics, and medical devices. Choose GeneSiC Semiconductor's GB2X50MPS12-227 for applications where space-saving design meets industrial-grade reliability.
Specifications
- Product Status: Active
- Diode Configuration: 2 Independent
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 93A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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