GC9986-8JR
Microchip Technology
Microchip Technology
SI SCHOTTKY NON HERMETIC BEAM LE
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The GC9986-8JR RF Diode by Microchip Technology is a premium component in the Diodes - RF category, known for its high-speed performance and reliability. As part of the Discrete Semiconductor Products lineup, it is designed to handle high-frequency signals with precision. Ideal for use in wireless communication, broadcasting, and military systems, this diode ensures minimal distortion and maximum efficiency. With Microchip Technology's GC9986-8JR, you get a product that excels in critical RF applications, providing unmatched durability and performance.
Specifications
- Product Status: Active
- Diode Type: Schottky - 1 Bridge
- Voltage - Peak Reverse (Max): 5V
- Current - Max: -
- Capacitance @ Vr, F: 0.15pF @ 0V, 1MHz
- Resistance @ If, F: 15Ohm @ 10mA, 100MHz
- Power Dissipation (Max): 100 mW
- Operating Temperature: -65°C ~ 150°C
- Package / Case: 4-SMD, Flat Lead
- Supplier Device Package: -
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