GE2X10MPS06D
GeneSiC Semiconductor
GeneSiC Semiconductor
650V 20A TO-247-3 SIC SCHOTTKY M
$6.48
Available to order
Reference Price (USD)
1+
$6.48000
500+
$6.4152
1000+
$6.3504
1500+
$6.2856
2000+
$6.2208
2500+
$6.156
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing GeneSiC Semiconductor's GE2X10MPS06D, a game-changing diode array in the Discrete Semiconductor Products category. Specifically engineered for high-frequency rectification, this component minimizes switching losses in SMPS and RF circuits. Its hermetically sealed package provides exceptional moisture resistance for outdoor applications like traffic signal systems and railway electronics. Trust GeneSiC Semiconductor's decades of semiconductor expertise embedded in every GE2X10MPS06D for uncompromising performance.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 23A (DC)
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
Related Products
SMC Diode Solutions
MBRF20200CT
SMC Diode Solutions
161CMQ040
Phoenix Contact
2950077
Vishay General Semiconductor - Diodes Division
VI20150C-M3/4W
SanRex Corporation
DCA150AA60
Vishay General Semiconductor - Diodes Division
VS-MBR2035CTHN3
GeneSiC Semiconductor
MBRT12080
SemiQ
GHXS050B065S-D3
Vishay General Semiconductor - Diodes Division
VS-30CTQ060-1-M3
Vishay General Semiconductor - Diodes Division