Shopping cart

Subtotal: $0.00

GL41JHE3/96

Vishay General Semiconductor - Diodes Division
GL41JHE3/96 Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO213AB
$0.14
Available to order
Reference Price (USD)
6,000+
$0.14240
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C

Related Products

Panjit International Inc.

PG102R_R2_00001

Renesas Electronics America Inc

RKD704KP#R5

Nexperia USA Inc.

PMEG2005BELD,315

onsemi

MR856G

Power Integrations

LXA06B600

Vishay General Semiconductor - Diodes Division

S5B-E3/57T

Microchip Technology

CDLL2810/TR

Vishay General Semiconductor - Diodes Division

GP30G-E3/54

Vishay General Semiconductor - Diodes Division

AS1PKHM3/84A

Top