GP2T080A120U
SemiQ
SemiQ
SIC MOSFET 1200V 80M TO-247-3L
$12.44
Available to order
Reference Price (USD)
1+
$12.44000
500+
$12.3156
1000+
$12.1912
1500+
$12.0668
2000+
$11.9424
2500+
$11.818
Exquisite packaging
Discount
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Enhance your electronic projects with the GP2T080A120U single MOSFET from SemiQ. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust SemiQ's GP2T080A120U for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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