GPA020A135MN-FD
SemiQ
SemiQ
IGBT 1350V 40A 223W TO3PN
$0.00
Available to order
Reference Price (USD)
2,500+
$1.72900
Exquisite packaging
Discount
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The GPA020A135MN-FD Single IGBT transistor by SemiQ is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The GPA020A135MN-FD ensures precise power control and long-term stability. With SemiQ's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate GPA020A135MN-FD into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1350 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 20A
- Power - Max: 223 W
- Switching Energy: 2.5mJ (on), 760µJ (off)
- Input Type: Standard
- Gate Charge: 180 nC
- Td (on/off) @ 25°C: 25ns/175ns
- Test Condition: 600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 425 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
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