Shopping cart

Subtotal: $0.00

GPAS1002 MNG

Taiwan Semiconductor Corporation
GPAS1002 MNG Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 10A TO263AB
$0.00
Available to order
Reference Price (USD)
4,000+
$0.26100
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D²PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Taiwan Semiconductor Corporation

HER101G R0G

Central Semiconductor Corp

1N5419 BK

Vishay General Semiconductor - Diodes Division

15ETH06-1

Vishay General Semiconductor - Diodes Division

RGP10AHE3/73

Vishay General Semiconductor - Diodes Division

SE40PDHM3/87A

Rohm Semiconductor

1SR139-600T-31

Rohm Semiconductor

RFUS20TM4S

Vishay General Semiconductor - Diodes Division

1N3612GPHE3/54

Vishay General Semiconductor - Diodes Division

VIT3060GHM3/4W

Rectron USA

M6G

Top