GPAS1006 MNG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 10A TO263AB
$0.00
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Reference Price (USD)
4,000+
$0.26100
Exquisite packaging
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The GPAS1006 MNG by Taiwan Semiconductor Corporation is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The GPAS1006 MNG is also used in smart home devices and wearable technology, ensuring seamless operation. Taiwan Semiconductor Corporation's expertise in semiconductor technology guarantees that the GPAS1006 MNG delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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