GT10J312(Q)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
IGBT 600V 10A 60W TO220SM
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Enhance your electronic projects with the GT10J312(Q) Single IGBT transistor from Toshiba Semiconductor and Storage. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the GT10J312(Q) ensures precision and reliability. Toshiba Semiconductor and Storage's cutting-edge technology guarantees a component that meets the highest industry standards. Choose GT10J312(Q) for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 20 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
- Power - Max: 60 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 400ns/400ns
- Test Condition: 300V, 10A, 100Ohm, 15V
- Reverse Recovery Time (trr): 200 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-220SM
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