GT55N06D5
Goford Semiconductor
Goford Semiconductor
N60V,RD(MAX)<8M@10V,RD(MAX)<13M@
$0.95
Available to order
Reference Price (USD)
1+
$0.95000
500+
$0.9405
1000+
$0.931
1500+
$0.9215
2000+
$0.912
2500+
$0.9025
Exquisite packaging
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The GT55N06D5 single MOSFET from Goford Semiconductor is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the GT55N06D5 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 53A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 70W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (4.9x5.75)
- Package / Case: 8-PowerTDFN
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