Shopping cart

Subtotal: $0.00

GWM100-01X1-SLSAM

IXYS
GWM100-01X1-SLSAM Preview
IXYS
MOSFET 6N-CH 100V 90A ISOPLUS
$0.00
Available to order
Reference Price (USD)
1+
$22.94000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 90A
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 17-SMD, Flat Leads
  • Supplier Device Package: ISOPLUS-DIL™

Related Products

Renesas Electronics America Inc

2SK2788VY90TR

Fairchild Semiconductor

FDP2710_SN00168

Microsemi Corporation

APTC90AM602G

Infineon Technologies

BSZ0908NDXTMA2

Renesas Electronics America Inc

2SK3483-Z-E2-AZ

Vishay Siliconix

SIB911DK-T1-E3

Central Semiconductor Corp

CTLDM8120-M832DS TR

Renesas Electronics America Inc

UPA2381T1P-E1-A#YW

Microchip Technology

MSCMC120AM03CT6LIAG

Top