H5N2007LSTL-E
Renesas Electronics America Inc
Renesas Electronics America Inc
25A, 200V, 0.047OHM, N CHANNEL M
$3.09
Available to order
Reference Price (USD)
1+
$3.09000
500+
$3.0591
1000+
$3.0282
1500+
$2.9973
2000+
$2.9664
2500+
$2.9355
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The H5N2007LSTL-E by Renesas Electronics America Inc is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Renesas Electronics America Inc for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Fairchild Semiconductor
HUFA75344G3
STMicroelectronics
STP12NK30Z
Toshiba Semiconductor and Storage
TJ60S06M3L,LXHQ
Diodes Incorporated
ZVN0545ASTZ
Infineon Technologies
BSZ150N10LS3GATMA1
Microchip Technology
APT12060LVRG
Alpha & Omega Semiconductor Inc.
AON6250
onsemi
CPH3341-TL-E
Infineon Technologies
BSC016N06NSTATMA1
Panjit International Inc.