H5N2307LSTL-E
Renesas Electronics America Inc
Renesas Electronics America Inc
30A, 230V, 0.052OHM, N CHANNEL M
$3.12
Available to order
Reference Price (USD)
1+
$3.12000
500+
$3.0888
1000+
$3.0576
1500+
$3.0264
2000+
$2.9952
2500+
$2.964
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The H5N2307LSTL-E by Renesas Electronics America Inc is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Renesas Electronics America Inc for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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