HAT1069C-EL-E
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 12V 4A 6CMFPAK
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Discover the HAT1069C-EL-E from Renesas Electronics America Inc, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the HAT1069C-EL-E ensures reliable performance in demanding environments. Upgrade your circuit designs with Renesas Electronics America Inc's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 52mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 6-CMFPAK
- Package / Case: 6-SMD, Flat Leads
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