HAT2171H-EL-E
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 40V 40A LFPAK
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the HAT2171H-EL-E from Renesas Electronics America Inc, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the HAT2171H-EL-E ensures reliable performance in demanding environments. Upgrade your circuit designs with Renesas Electronics America Inc's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK
- Package / Case: SC-100, SOT-669
Related Products
onsemi
FQD5P10TF
onsemi
IRLM210ATF
onsemi
NTB85N03G
Infineon Technologies
IPW65R190CFDAFKSA1
Infineon Technologies
IPD60R750E6BTMA1
Infineon Technologies
IRF7353D1TR
onsemi
NTTFS4824NTWG
Infineon Technologies
IPD068N10N3GBTMA1
Fairchild Semiconductor
FDMS0310S
IXYS