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HAT2172H-EL-E

Renesas Electronics America Inc
HAT2172H-EL-E Preview
Renesas Electronics America Inc
MOSFET N-CH 40V 30A LFPAK
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669

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