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HAT2203C-EL-E

Renesas
HAT2203C-EL-E Preview
Renesas
HAT2203C-EL-E - SILICON N CHANNE
$0.23
Available to order
Reference Price (USD)
1+
$0.23078
500+
$0.2284722
1000+
$0.2261644
1500+
$0.2238566
2000+
$0.2215488
2500+
$0.219241
Exquisite packaging
Discount
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 830mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-CMFPAK
  • Package / Case: 6-SMD, Flat Leads

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