HAT2210RWS-E
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-PAK 8SOP
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The HAT2210RWS-E by Renesas Electronics America Inc is a superior addition to the Discrete Semiconductor Products inventory. As a Transistors - FETs, MOSFETs - Arrays device, it features low threshold voltage and high switching speed, ideal for energy-efficient designs. Suitable for applications like smart home devices, power tools, and HVAC systems, the HAT2210RWS-E ensures consistent and dependable performance. Renesas Electronics America Inc's commitment to quality ensures this MOSFET array exceeds expectations.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual), Schottky
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Ta)
- Rds On (Max) @ Id, Vgs: 24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V, 1330pF @ 10V
- Power - Max: 1.5W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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