HAT2266HWS-E
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 60V 30A 5LFPAK
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The HAT2266HWS-E from Renesas Electronics America Inc redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the HAT2266HWS-E offers the precision and reliability you need. Trust Renesas Electronics America Inc to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 23W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK
- Package / Case: SC-100, SOT-669
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