HD1A3M(0)-T1-AZ
Renesas Electronics America Inc
Renesas Electronics America Inc
TRANSISTOR NPN SC62-3
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Upgrade your electronic designs with the HD1A3M(0)-T1-AZ by Renesas Electronics America Inc, a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the HD1A3M(0)-T1-AZ excels in automotive systems, power management modules, and communication devices. Renesas Electronics America Inc's commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose HD1A3M(0)-T1-AZ for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Obsolete
- Transistor Type: 1 NPN Pre-Biased, 1 NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Resistor - Base (R1): 1kOhms
- Resistor - Emitter Base (R2): 1kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 2W
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SC-62
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