HER306G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
$0.25
Available to order
Reference Price (USD)
1+
$0.25105
500+
$0.2485395
1000+
$0.246029
1500+
$0.2435185
2000+
$0.241008
2500+
$0.2384975
Exquisite packaging
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Enhance your circuit performance with the HER306G single rectifier diode from Taiwan Semiconductor Corporation. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the HER306G delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. Taiwan Semiconductor Corporation's HER306G is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 35pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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