HERAF1006G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE GEN PURP 10A 600V IT0-220A
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Enhance your circuit performance with the HERAF1006G single rectifier diode from Taiwan Semiconductor Corporation. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the HERAF1006G delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. Taiwan Semiconductor Corporation's HERAF1006G is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 80 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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