HGT1N40N60A4D
onsemi
onsemi
IGBT MOD 600V 110A 298W SOT227B
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Optimize your power systems with onsemi's HGT1N40N60A4D, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The HGT1N40N60A4D is particularly effective in high-ambient-temperature environments like steel mill drives. onsemi brings decades of semiconductor expertise to every HGT1N40N60A4D module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 110 A
- Power - Max: 298 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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