HGT1S12N60B3S
Harris Corporation
Harris Corporation
27A, 600V, UFS N-CHANNEL IGBT
$1.30
Available to order
Reference Price (USD)
1+
$1.30000
500+
$1.287
1000+
$1.274
1500+
$1.261
2000+
$1.248
2500+
$1.235
Exquisite packaging
Discount
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The HGT1S12N60B3S from Harris Corporation is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose HGT1S12N60B3S for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 27 A
- Current - Collector Pulsed (Icm): 110 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
- Power - Max: 104 W
- Switching Energy: 304µJ (on), 250µJ (off)
- Input Type: Standard
- Gate Charge: 68 nC
- Td (on/off) @ 25°C: 26ns/150ns
- Test Condition: 480V, 12A, 25Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK (TO-263)
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